Portfolio

PhD

Papers

  • S. Marcinkevičius, T. K. Uždavinys, H. M. Foronda, D. A. Cohen, C. Weisbuch, and J. S. Speck, “Intervalley energy of GaN conduction band measured by femtosecond pump-probe spectroscopy”, Phys. Rev. B 94, 235205 (2016)

  • T. K. Uždavinys, S. Marcinkevičius, J. H. Leach, K. R. Evans, and D. C. Look, “Photoexcited carrier trapping and recombination at Fe centers in GaN”, J. Appl. Phys. 119, 215706 (2016)

  • R. Butté, L. Lahourcade, T. K. Uždavinys, G. Callsen, M. Mensi, M. Glauser, G. Rossbach, D. Martin, J-F. Carlin, S. Marcinkevičius and N. Grandjean, “Optical absorption edge broadening in thick In- GaN layers: Random alloy atomic disorder and growth mode induced fluctuations”, Appl. Phys. Lett., 112, 032106 (2018).

  • T. K. Uždavinys, S. Marcinkevičius, M. Mensi, L. Lahourcade, J-F. Carlin, D. Martin, R. Butté and N. Grandjean, “Impact of surface morphology on properties of light emission in InGaN epilayers”, Appl. Phys. Express 11, 051004 (2018).

  • R. Ivanov, S. Marcinkevičius, T. K. Uždavinys, L. Y. Kuritzky, S. Nakamura, and J. S. Speck, “Scanning near-field microscopy of carrier lifetimes in m-plane InGaN quantum wells”, Appl. Phys. Lett. 110, 031109 (2017).

  • T. K. Uždavinys, D. L. Becerra, R. Ivanov, S. P. DenBaars, S. Nakamura, J. S. Speck, and S. Marcinkevičius, “Influence of well width fluctuations on recombination properties in semipolar InGaN quantum wells studied by time- and spatially-resolved near-field photoluminecence”, Opt. Mat. Express, 7(9), 3116-3123 (2017).