Portfolio
PhD
- PhD thesis [download PDF]
- PhD defense [recording on YouTube]
Papers
S. Marcinkevičius, T. K. Uždavinys, H. M. Foronda, D. A. Cohen, C. Weisbuch, and J. S. Speck, “Intervalley energy of GaN conduction band measured by femtosecond pump-probe spectroscopy”, Phys. Rev. B 94, 235205 (2016)
T. K. Uždavinys, S. Marcinkevičius, J. H. Leach, K. R. Evans, and D. C. Look, “Photoexcited carrier trapping and recombination at Fe centers in GaN”, J. Appl. Phys. 119, 215706 (2016)
R. Butté, L. Lahourcade, T. K. Uždavinys, G. Callsen, M. Mensi, M. Glauser, G. Rossbach, D. Martin, J-F. Carlin, S. Marcinkevičius and N. Grandjean, “Optical absorption edge broadening in thick In- GaN layers: Random alloy atomic disorder and growth mode induced fluctuations”, Appl. Phys. Lett., 112, 032106 (2018).
T. K. Uždavinys, S. Marcinkevičius, M. Mensi, L. Lahourcade, J-F. Carlin, D. Martin, R. Butté and N. Grandjean, “Impact of surface morphology on properties of light emission in InGaN epilayers”, Appl. Phys. Express 11, 051004 (2018).
R. Ivanov, S. Marcinkevičius, T. K. Uždavinys, L. Y. Kuritzky, S. Nakamura, and J. S. Speck, “Scanning near-field microscopy of carrier lifetimes in m-plane InGaN quantum wells”, Appl. Phys. Lett. 110, 031109 (2017).
T. K. Uždavinys, D. L. Becerra, R. Ivanov, S. P. DenBaars, S. Nakamura, J. S. Speck, and S. Marcinkevičius, “Influence of well width fluctuations on recombination properties in semipolar InGaN quantum wells studied by time- and spatially-resolved near-field photoluminecence”, Opt. Mat. Express, 7(9), 3116-3123 (2017).